Amplifier and transmitter

ABSTRACT

An amplifier has an N number of input networks connected to an input terminal to receive an input signal, a first amplifier to amplify one output signal from the N number of input networks, a (N−1) number of secondary amplifiers to amplify the remaining (N−1) number of output signals, except for the one output signal, from the N number of input networks, where the amplification order of the (N−1) number of secondary amplifiers is determined based on the power level of each output signal from the N number of input networks when the first amplifier is operational, an N number of output networks which are arranged, and a first bias network to supply a D.C. bias voltage to at least one of the N number of output networks. An electrical length of the first bias network is less than 90 degrees.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2017-180690, filed on Sep. 20,2017, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments relate to an amplifier and a transmitter.

BACKGROUND

A Doherty amplifier, which dynamically changes the number of amplifiersin accordance with the amplitude of a high-frequency input signal, isknown. The Doherty amplifier is configured with one main amplifier andone or more number of peak amplifiers. A Doherty amplifier having an Nnumber of amplifiers is referred to as an N-way Doherty amplifier. Themain amplifier always operates, and the peak amplifiers operate onlywith great power. Although a 2-way Doherty amplifier having one peakamplifier is popular, there is a Doherty amplifier having two or morepeak amplifiers. Each amplifier uses a transistor (bipolar, FET) as anamplification element.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of an amplifier according to anembodiment;

FIG. 2 is a conceptual block diagram of the amplifier of FIG. 1;

FIG. 3 is an equivalent circuit diagram of an amplifier according to acomparative example;

FIG. 4A is a circuit diagram showing the basic configuration of a mainamplifier of the amplifier in FIG. 1;

FIG. 4B is a graph showing phase change of S21 over frequency andamplitude change of S21 over frequency in the circuitry of FIG. 4A;

FIG. 4C is a circuit diagram showing the basic configuration of a peakamplifier of the amplifier in FIG. 1;

FIG. 5 is an amplifier for which a second bias network is added to thecircuitry of FIG. 1;

FIG. 6A is a circuit diagram showing the basic configuration of a mainamplifier of the amplifier of FIG. 5;

FIG. 6B is a Smith chart showing the S11 parameter of the circuitry ofFIG. 6A;

FIG. 7 is an amplifier in which a first bias network is connected to anoutput node of the rightmost peak amplifier;

FIG. 8 is an amplifier in which first bias networks are connected tooutput nodes of peak amplifiers, in addition to the leftmost andrightmost peak amplifiers;

FIG. 9 is an amplifier for which a second bias network is omitted inFIG. 8;

FIG. 10 is an amplifier in which an inductor is provided as a biasnetwork; and

FIG. 11 is a block diagram showing an example of the internalconfiguration of a transmitter.

DETAILED DESCRIPTION

According to one embodiment, an amplifier has an N number of inputnetworks connected to an input terminal to receive an input signal;

a first amplifier to amplify one output signal from the N number ofinput networks, a (N−1) number (N being an integer of three or more) ofsecondary amplifiers to amplify the remaining (N−1) number of outputsignals from the N number of input networks, where the amplificationorder of the (N−1) number of secondary amplifiers is determined based onthe power level of each output signal from the N number of inputnetworks when the first amplifier is operational, an N number of outputnetworks which are arranged so that a single output network existsbetween each output node of the N amplifiers and a common loadconnection node, and a first bias network to supply a D.C. bias voltageto at least one of the N number of output networks. An electrical lengthof the first bias network is less than 90 degrees.

Hereinafter, embodiments will be explained with reference to thedrawings. In the present specification and the accompanying drawings,for easy understanding and simplicity of drawings, the explanation andthe drawings are made with part of the configuration being omitted,modified or simplified. However, the technical contents to the extentthat a similar function can be expected will be interpreted to beincluded in the embodiments.

FIG. 1 is an equivalent circuit diagram of an amplifier 1 according toan embodiment. FIG. 2 is a conceptual block diagram of the amplifier 1of FIG. 1. In both FIGS. 1 and 2, a transistor is expressed as an idealcurrent source. The amplifier 1 according to the present embodiment isan N-way Doherty amplifier 1 that dynamically changes the number ofamplifiers in accordance with the amplitude of a high-frequency inputsignal. The N-way means that an N number of amplifiers are provided, Nbeing three or more. An electrical length is the electrical length withrespect to a fundamental wave, unless otherwise specified.

As shown in FIGS. 1 and 2, the amplifier 1 according to the presentembodiment is provided with an input splitter 2, a main amplifier (firstamplifier) 3, a (N−1) number (N being an integer of 3 or more) peakamplifiers (secondary amplifiers) 4, an N number of input networks 5,the N number of output networks 6, a first bias network 7, an outputcombiner 8, and a D.C. power supply 9. The main amplifier 3 and the(N−1) number of peak amplifiers 4 are connected in parallel. The inputnetworks 5, the output networks 6, and the bias network 7 may berealized with a transmission line, lumped constant parts such as a coiland a capacitor, a waveguide, or a combination thereof. To the mainamplifier 3 and each peak amplifier 4, a single D.C. voltage is suppliedfrom the D.C. power supply 9. The single D.C. voltage is used as a biasvoltage, as described later. The bias voltage is a voltage to be appliedto a drain in the case of an FET, whereas to a collector in the case ofa bipolar transistor. As described, one unique point is biasing with asingle D.C. voltage.

The main amplifier 3 and an output node of each peak amplifier 4 areconnected to a load connection node n1 via the N number of outputnetworks 6. Load resistance R_(LOAD) shared by the amplifiers 3 and 4 isconnected to the load connection node n1. The main amplifier 3 performsa signal amplification operation. The main amplifier 3 always performsan amplification operation while a signal is being input thereto. Thesignal input to the main amplifier 3 is one of the signals that an inputsignal of the input splitter 2 shown in FIG. 2 is split into the Nnumber of signals by the input splitter 2 to be input to the N number ofinput networks 5, and then is output from the N number of the inputnetworks 5. When the output voltage and current of the main amplifier 3are denoted as V_(M) and I_(M), respectively, the main amplifier 3 isexpressed equivalently as having a current source that feeds a currentobtained by phase shifting by −j×(N−2) with respect to the phase of acurrent flowing through the rightmost peak amplifier 4 in FIG. 1.

The (N−1) number of peak amplifiers 4 perform an amplification operationin order in accordance with the signal amplitude while the mainamplifier 3 is performing the amplification operation. In other words,in accordance with the signal amplitude, the number of peak amplifiers 4that perform the amplification operation changes. The greater the signalamplitude is, the number of peak amplifiers 4 that perform theamplification operation increases more. In this way, the signalamplification operation can be performed efficiently to reduce powerconsumption.

In more specifically, among the (N−1) number of peak amplifiers 4 shownin FIG. 1, the rightmost peak amplifier 4 performs the amplificationoperation at first and then the other peak amplifiers 4 start theamplification operation in order from the rightmost to the leftmost asthe amplitude of signals input to the peak amplifiers 4 becomes greater.

The output currents flowing through the (N−1) number of peaks amplifiers4 are different in phase. With respect to the phase of a current flowingthrough the rightmost peak amplifier 4, the phase of a current flowingthrough the leftmost peak amplifier 4 on the right side of the mainamplifier 3 is shifted by −j×(N−2) like the main amplifier 3, and thephase of a current flowing through the peak amplifier 4 on the rightside of the leftmost peak amplifier 4 is shifted by −j×(N−3).Accordingly, each peak amplifier 4 is expressed equivalently as having acurrent source that feeds a current of its inherent phase. The phasedifference among the currents is caused in FIG. 2 by splitting the inputsignal by the input splitter 2 to a plurality of input networks 5.

The N number of input networks 5 are situated between an input terminalof the input splitter 2 to which an input signal is input and an inputnode of the main amplifier 3 and also between the above-described inputterminal and each input node of the (N−1) number of peak amplifiers 4. Adesign is made on the phase shift amount so that a phase shift amountbetween the above-described input terminal and the load connection noden1 via the main amplifier 3 using one of the N number of input networks5, is equal to a phase shift amount between the above-described inputterminal and the load connection node n1 via one of the peak amplifiers4 using the input network 5 connected to the one peak amplifier 4 inquestion. Such a design can be performed by adjusting circuitry (forexample, electrical length and width of a microstrip line) thatconfigures each input network 5.

The N number of output networks 6 are situated between an output node ofthe main amplifier 3 and the load connection node n1 and also betweenoutputs node of the (N−1) number of peak amplifiers 4 and the connectionnode n1. The output networks 6 can be realized, but not limited to,using circuitry such as microstrip line, LC circuitry, etc. where eachcircuitry can uniquely control the harmonic impedances. The controllableharmonic impedance means that each circuitry (for example, electricallength and width of a microstrip line) can be adjusted separately. Forexample, the electrical lengths of the N number of output networks 6 areadjusted separately so that the transfer characteristics at a signalfundamental frequency, at the second harmonic frequency, and at thethird harmonic frequency become ideal characteristics.

The first bias network 7 supplies a D.C. bias voltage to the mainamplifier 3 and to at least one of the output nodes of the (N−1) numberof peak amplifiers 4, that is, to at least one of the N number of outputnetworks 6. The D.C. bias voltage is supplied from the D.C. power supply9 shown in FIG. 1. FIG. 1 shows an example in which the first biasnetwork 7 is connected to the output node of the main amplifier 3.However, the first bias network 7 may be connected to the output node ofany of the (N−1) number of peak amplifiers 4. For example, in the casewhere a plurality of first bias networks 7 are connected to theplurality of output networks 6, respectively, a single D.C. voltage issupplied to any of the first bias networks 7. In this way, it is notnecessary to provide a plurality of bias power supplies, whichsimplifies the circuit configuration of the amplifier 1.

Circuit elements such as transistors that configure the main amplifier 3and the (N−1) number of peak amplifiers 4 have parasitic components. InFIG. 1, parasitic components at the output node of each amplifier areequivalently represented with a shunt capacitor and a series inductor.For example, the shunt capacitor and the series inductor of the mainamplifier 3 are denoted as C_(M) and L_(M), respectively, the shuntcapacitor and the series inductor of the rightmost peak amplifier 4 aredenoted as C_(P1) and L_(P1), respectively, and the shunt capacitor andthe series inductor of the leftmost peak amplifier 4 are denoted asC_(P(N-1)) and L_(P(N-1)), respectively.

In the amplifier 1 of FIGS. 1 and 2, the first bias network 7 connectedto the output node of the main amplifier 3 is circuitry of an electricallength less than 90 degrees. This circuitry supplies the D.C. biasvoltage to the main amplifier 3 and to the N number of output networks 6connected to all of the output nodes of the (N−1) number of peakamplifiers 4, and controls the harmonic impedance of the amplifiers 3and 4.

Moreover, in the amplifier 1 of FIGS. 1 and 2, the electrical lengths ofthe N number of output networks 6 are adjusted separately to be greateror less than 90 degrees, for desired amplification operations. Forexample, in the case of a 3-way Doherty amplifier 1, the electricallength of circuitry T1 is adjusted to be greater than 90 degrees, andthe electrical lengths of circuitry T2 and T3 are adjusted to be lessthan 90 degrees, to achieve desired amplification performance. Aplurality of first bias networks 7 may be connected to the mainamplifier 3 and to the output nodes of any of two or more of the peakamplifiers, respectively. In this case, a single D.C. voltage issupplied to any of the first bias networks 7.

FIG. 3 is an equivalent circuit diagram of an amplifier 1 according to acomparative example. In FIG. 3, different from FIG. 1, the first biasnetwork 7 is not provided. The electrical lengths of the N number ofoutput networks 6 of FIG. 3 are all 90 degrees. The output-current phaseof each peak amplifier 4 is set to become a balanced phase. The optimumbalanced phase in the amplifier 1 of FIG. 3 is determined by the outputnode of each amplifier. Since parasitic components of transistors andthe like that configure the amplifier 1 have a frequency and phaseresponse, in the design of the N-way Doherty amplifier 1, the parasiticcomponents are required to be taken into consideration. The parasiticcomponents equivalently function to lengthen or shorten the circuitryelectrical length, however, since an ideal amplifier 1 is assumed tohave a circuitry electrical length of 90 degrees, there is a differencein amplification operation from an actual amplifier 1. Moreover,internal matching and package shape of the amplifier 1 become a causefor the amplification operation of the actual amplifier 1 not to beideal amplification operation.

By contrast, in the present embodiment, as shown in FIG. 1, the firstbias network 7 that supplies a single D.C. bias voltage is connected,for example, to the output node of the main amplifier 3, with theelectrical length of the first bias network 7 being set to be less than90 degrees and the electrical lengths of the N number of output networks6 being separately adjusted to be greater or less than 90 degrees. Inthis way, the parasitic components at the output node of each amplifiercan be compensated for.

FIGS. 4A and 4B are figures showing the characteristics of the mainamplifier 3 in the amplifier 1 of FIG. 1. FIG. 4A is a circuit diagramshowing the basic configuration of the main amplifier 3 of the amplifier1 in FIG. 1. FIG. 4B is a graph showing phase and amplitude change overfrequency of an S-parameter S21 (through) in the circuitry of FIG. 4A.The graph shows how to control the second and third harmonic impedanceswhile performing an amplification operation close to that of an idealN-way Doherty amplifier 1. FIG. 4C is a circuit diagram showing thebasic configuration of each peak amplifier 4 in the amplifier 1 of FIG.1.

In the circuitry of FIG. 4A, as parasitic components, a shunt capacitorC and a series inductor L are connected to a Port 1. To the output ofthe series inductor L, a Port2 is connected via an output network 6T1,and also a first bias network 7 that supplies a D.C. bias voltage V_(DD)is connected. The electrical length of the first bias network 7 is setto be less than 90 degrees. The Port 2 is equivalent to the loadconnection node n1 of FIG. 1.

FIG. 4B shows a graph close to ideal characteristics of the circuitry ofFIG. 4A. As understood from the graph, the phase of S21 at thefundamental frequency is about −90 degrees, with an amplitude of about0.75. The phase at the fundamental frequency is set to −90 degrees byinteraction of the parasitic components C and L, the first bias network7, and the output network 6.

The phase of S21 at the second harmonic is about 180 degrees, with anamplitude of about 1. The phase and amplitude of S21 at the thirdharmonic are minimized to about 0 and about 0.5, respectively. Thecharacteristics of the graph are obtained by adjustment to make theelectrical length of the output network 6 greater or less than 90degrees. Accordingly, the phase difference between the Ports 1 and 2 atthe fundamental frequency is 90 degrees, the phase difference betweenthe Ports 1 and 2 at the second harmonic is 180 degrees, and the phasedifference between the Ports 1 and 2 at the third harmonic is 0 degrees.

As understood from the graph of FIG. 4B, the first bias network 7 havingan electrical length less than 90 degrees is connected to the mainamplifier 3 or at the output node of the peak amplifier 4, to supply asingle D.C. bias voltage to the output network 6, with adjustment to theelectrical length of the output network 6 to be greater or less than 90degrees, which achieves an amplification operation close to an idealoperation with consideration of parasitic components.

However, harmonic control is not enough only by providing the N numberof output networks 6 and the first bias network 7. In order to performharmonic control at high accuracy, further ideas on circuitry arerequired.

In FIG. 5, a second bias network 10 is added to the circuitry of FIG. 1.The second bias network 10 is circuitry for performing bias supply, forexample, at the same level as the ground level to the load connectionnode n1. Although one end of the second bias network 10 may notnecessary be set to the ground level, since the present embodiment isunique in use of a single D.C. bias voltage, the one end of the secondbias network 10 is made conductive to a solid ground pattern to simplifythe circuitry configuration. As described, there is a unique point inthat the second bias network 10 performs biasing at a different voltagelevel from the first bias network 7. The second bias network 10 isprovided to control the harmonics of the main amplifier 3 and the (N−1)number of peak amplifiers 4. The second bias network 10 may be realizedwith a transmission line, such as the output network 6, or lumpedconstant parts such as a coil and a capacitor, a waveguide, or acombination thereof, in the same manner as other networks,

FIGS. 6A and 6B are figures showing the characteristics of the mainamplifier 3 in the amplifier 1 of FIG. 5. FIG. 6A is a circuit diagramshowing the basic configuration of the main amplifier 3 of the amplifier1 in FIG. 5. FIG. 6B is a Smith chart showing the S11 parameters of thecircuitry of FIG. 6A. The circuitry of FIG. 6A has the second biasnetwork 10 added to the circuitry of FIG. 4A. One end of the second biasnetwork 10 is set to a ground voltage, the other end thereof beingconnected to a Port 2. In the same manner as the circuitry of FIG. 4A,in the circuitry of FIG. 6A, the electrical length of the first biasnetwork 7 is set to a value less than 90 degrees, whereas the electricallength of the output network 6 is set to a value greater or less than 90degrees. The electrical length of the second bias network 10 is set, forexample, to 90 degrees, when its one end is set to the ground level.

As understood from the Smith chart of FIG. 6B, in the circuitry of FIG.6A, by adjusting the electrical length of the output network 6 to begreater or less than 90 degrees, the fundamental frequency f0, thesecond harmonic 2f0, and the third harmonic 3f0 are aligned in an almoststraight line. In more specifically, the second harmonic 2f0 is situatedon the right side of the Smith chart, having a value like opencircuitry. Or the third harmonic 3f0 is situated on the left side of theSmith chart, having a value like short circuitry. Accordingly, theamplifier 1 of FIGS. 5 and 6A performs ideal amplification operation.

Although, in the amplifiers 1 of FIGS. 1 and 5, the first bias network 7is not connected in a symmetrical manner, by connecting the first biasnetwork 7 in the symmetrical manner, a further ideal amplificationoperation can be performed. In FIG. 7, in addition to the configurationof the amplifier 1 of FIG. 5, a first bias network 7 is also connectedto the output node of the rightmost peak amplifier 4. In the case ofFIG. 7, since the first bias networks 7 are connected to the amplifier 3and the peak amplifier 4 at the leftmost and rightmost sides,respectively, the circuitry of FIG. 7 is excellent in symmetry and afurther ideal amplification operation is performed.

In FIG. 8, in addition to the configuration of the amplifier 1 of FIG.7, first bias networks 7 are further connected to the output nodes ofpeak amplifiers 4, in addition to the leftmost and rightmost peakamplifiers. In the amplifier 1 of FIG. 8, since the number of first biasnetworks 7 connected to the output nodes of the peak amplifiers 4,respectively, is increased, parasitic components of the output nodes ofthe peak amplifiers 4 can be compensated for accurately, and harmonicimpedance control can also be performed accurately, so that, compared tothe circuitry of FIG. 7, a further ideal amplification operation can beperformed.

Although the amplifiers 1 of FIGS. 7 and 8 are provided with the secondbias network 10, as shown in FIG. 9, the second bias network 10 may beomitted. Moreover, although in the examples of the amplifiers 1described above, the first bias network 7 is configured with atransmission line such as a microstrip line, the first bias network 7may be a lumped element inductor as shown in FIG. 10.

In the examples of the amplifiers 1 in FIG. 1, and 5 to 10, electricallengths of the N number of output networks 6, the first bias network 7,and the second bias network 10 are adjusted. Not only the electricallengths, but the widths of the N number of output networks 6, the firstbias network 7, and the second bias network 10 may be adjusted. Byadjusting the widths, the impedance characteristics thereof listed upabove can be adjusted to make the amplification operation of theamplifier 1 close to an ideal one.

Although there is no particular limitation on the use of the amplifier 1according to the above-described present embodiment, the amplifier 1can, for example, be used in a transmitter. FIG. 11 is a block diagramshowing an example of the internal configuration of a transmitter 11.The transmitter 11 of FIG. 11 is provided with a baseband processor 12,a local oscillator 13, a modulator 14, a harmonic amplifier 15, and anantenna 16. The baseband processor 12 performs signal processing to abaseband signal. The local oscillator 13 generates a local oscillationsignal. The modulator 14 uses the local oscillation signal to modulatethe baseband signal to generate a high-frequency signal. The harmonicamplifier 15 amplifies the high-frequency signal and transmits theamplified high-frequency signal to the antenna 16. The amplifiers 1shown in the above-described FIGS. 1 and 5 to 10 can be used in theharmonic amplifier 15.

In FIG. 1 and the other figures, although the D.C. bias voltage suppliedto one end of the first bias network 7 is represented with differentsigns for the respective first bias networks 7, as described above, inthe present embodiment, a single D.C. bias voltage can be supplied.However, in some cases, D.C. bias voltages of different voltage levelsmay be supplied to a plurality of first bias networks 7, respectively.

As described above, in the present embodiment, the parasitic componentsof circuit elements that configure each amplifier in the amplifier 1 arecompensated for and the harmonic impedance is controlled, so that theamplifier 1 can perform an amplification operation close to an idealamplification operation. Accordingly, average power efficiency of asignal in a wide dynamic range can be improved. Moreover, since a singleD.C. bias voltage is used, it is enough to provide a single D.C. powersupply 9 and hence the entire configuration of the amplifier 1 can besimplified.

In more specifically, in the present embodiment, the electrical lengthof the first bias network 7 of the output network 6 is adjusted toperform parasitic component compensation and harmonic impedance control,so that, without a complex circuit configuration, the amplifier 1 canperform an ideal amplification operation. Moreover, by providing thesecond bias network 10, harmonic impedance control can further beperformed accurately.

As described, by controlling the harmonic impedance, the performance oftransistors used in the amplifier 1 can be improved. Moreover, althoughit takes much time to make an analysis of and to take measures againsttransistor parasitic components, according to the present embodiment,the effect of the transistor parasitic components can be compensated foraccurately.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

1-20. (canceled) 21: An amplifier comprising: a first amplifier toamplify an inputted first signal; at least two second amplifiers toamplify at least two of inputted second signals; a first output networkconnected to an output node of the first amplifier and a node connectedto a load; at least two second output networks which are connected tooutput nodes of the at least two of second amplifiers and which areelectrically connected to the node connected to the load; and at leasttwo first bias networks, wherein one of the first bias networks isconnected to the first output network and at least one of the first biasnetworks is connected to at least one of the second output networks tosupply D.C. voltages to at least one of the first output network and thesecond output networks; wherein an electrical length of the first biasnetwork is less than 90 degrees, and voltage levels of the D.C. voltagessupplied by the first bias networks are equal. 22: The amplifier ofclaim 21, wherein the first output network and the second outputnetworks are configured to control a harmonic-impedance. 23: Theamplifier of claim 21, wherein electrical lengths of the first outputnetwork and the second output networks are greater or less than 90degrees. 24: The amplifier of claim 23, wherein the electrical length ofthe first output network is set based on transfer characteristics at afundamental frequency, transfer characteristics at a second harmonicfrequency, and transfer characteristics at a third harmonic frequency ofthe first signal, and the electrical lengths of the second outputnetworks are set based on transfer characteristics at fundamentalfrequencies, transfer characteristics at second harmonic frequencies,and transfer characteristics at third harmonic frequencies of the secondsignals. 25: An amplifier comprising: a first amplifier to amplify aninputted first signal; at least two second amplifiers to amplify atleast two of inputted second signals; a first output network connectedto an output node of the first amplifier and a node connected to a load;at least two second output networks which are connected to output nodesof the at least two of second amplifiers and which are electricallyconnected to the node connected to the load; a first bias network tosupply D.C. voltages to the first output network and the second outputnetworks; and a second bias network connected to the node connected tothe load, which has a voltage level different from the D.C. voltagesupplied by the first bias network, and wherein an electrical length ofthe first bias network is less than 90 degrees. 26: The amplifier ofclaim 25, wherein the first output network and the second outputnetworks are configured to control a harmonic-impedance. 27: Theamplifier of claim 26, wherein electrical lengths of the first outputnetwork and the second output networks are greater or less than 90degrees. 28: The amplifier of claim 27, wherein the electrical length ofthe first output network is set based on transfer characteristics at afundamental frequency, transfer characteristics at a second harmonicfrequency, and transfer characteristics at a third harmonic frequency ofthe first signal, and the electrical lengths of the second outputnetworks are set based on transfer characteristics at fundamentalfrequencies, transfer characteristics at second harmonic frequencies,and transfer characteristics at third harmonic frequencies of the secondsignals. 29: The amplifier of claim 25, comprising at least two of thefirst bias networks, wherein one of the first bias networks is connectedto the first output network and at least one of first bias networks isconnected to at least one of the second output networks, and voltagelevels of the D.C. voltages supplied by the first bias networks areequal. 30: The amplifier of claim 25, wherein the second bias network isconfigured to control a harmonic-impedance of the first output networkand the second output networks. 31: The amplifier of claim 25, wherein avoltage level at the second bias network is a ground level. 32: Theamplifier of claim 25, wherein at least two of electric lengths of thefirst output network, the second output network, the first bias network,and the second bias network are different from each other, and at leasttwo of widths of the first output network, the second output network,the first bias network, and the second bias network are different fromeach other. 33: A transmitter comprising: a baseband processor toperform signal processing to a baseband signal; a modulator to modulatethe baseband signal by using a local oscillation signal to generate ahigh-frequency signal; and a high-frequency amplifier to amplify thehigh-frequency signal and transmit the amplified high-frequency signalto an antenna; wherein the high-frequency amplifier comprises: a firstamplifier to amplify an inputted first signal; at least two secondamplifiers to amplify at least two of inputted second signals; a firstoutput network connected to an output node of the first amplifier and anode connected to a load; at least two second output networks which areconnected to output nodes of the at least two of second amplifiers andwhich are electrically connected to the node connected to the load; afirst bias network to supply D.C. voltages to the first output networkand the second output networks; and a second bias network connected tothe node connected to the load, which has a voltage level different fromthe D.C. voltage supplied by the first bias network, and wherein anelectrical length of the first bias network is less than 90 degrees. 34:The amplifier of claim 33, wherein the first output network and thesecond output networks are configured to control a harmonic-impedance.35: The amplifier of claim 34, wherein electrical lengths of the firstoutput network and the second output networks are greater or less than90 degrees. 36: The amplifier of claim 35, wherein the electrical lengthof the first output network is set based on transfer characteristics ata fundamental frequency, transfer characteristics at a second harmonicfrequency, and transfer characteristics at a third harmonic frequency ofthe first signal, and the electrical lengths of the second outputnetworks are set based on transfer characteristics at fundamentalfrequencies, transfer characteristics at second harmonic frequencies,and transfer characteristics at third harmonic frequencies of the secondsignals. 37: The amplifier of claim 35, comprising at least two of thefirst bias networks, wherein one of the first bias networks is connectedto the first output network and at least one of first bias networks isconnected to at least one of the second output networks, and voltagelevels of the D.C. voltages supplied by the first bias networks areequal. 38: The amplifier of claim 35, wherein the second bias network isconfigured to control a harmonic-impedance of the first output networkand the second output networks. 39: The amplifier of claim 35, wherein avoltage level at the second bias network is a ground level. 40: Theamplifier of claim 35, wherein at least two of electric lengths of thefirst output network, the second output network, the first bias network,and the second bias network are different from each other, and at leasttwo of widths of the first output network, the second output network,the first bias network, and the second bias network are different fromeach other.